By adjusting the shape, free carrier density, and local dielectric environment of nanocrystals (NCs), one can manipulate optical responses thanks to their localized surface plasmon resonance (LSPR) capabilities.
As viable alternatives to pricey noble metal NCs in this situation, semiconductor NCs, in which plasmonic features result from various forms of doping, offer exceptional options in modifying LSPR properties for a wide range of applications. Although much research has been done to modify the LSPR properties of semiconductor NCs through doping, little is known about how surface ligand chemistry influences the augmentation of LSPR features. Dangling bonds and surface trap states are produced when surface atoms are not completely passivated, and these two phenomena may affect the free carrier density and, consequently, the optoelectronic capabilities.
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