Silicon carbide nanowires of diameter 15 nm can be grown onto a solid silicon carbide surface by carefully depositing droplets of catalyst liquid onto a flat silicon carbide substrate. Silicon carbide nanowires grow upward from the deposited drops, and if the drops are deposited in a pattern, an array of nanowire fins can be grown, forming a silicon carbide nano-heat sink. Consider finned and unfinned electronics packages in which an extremely small, 10 μm × 10 μm electronics device is sandwiched between two 100-nm-thick silicon carbide sheets. In both cases, the coolant is a dielectric liquid at 20°C. A heat transfer coefficient of 1.0 × 105 W/m2·K exists on the top and bottom of the unfinned package and on all surfaces of the exposed silicon carbide fins, which are each 300 nm long. Each nano-heat sink includes a 50 × 50 array of nanofins. Determine the maximum allowable heat rate that can be generated by the electronic device so that its temperature is maintained at 95°C for (a) the unfinned and (b) the finned packages
