The donor and accepter impurities in an abrupt junction silicon diode are 1 x 10¹⁶ cm⁻³ and 5 x 10¹⁸ cm⁻³, respectively. Assume that the intrinsic carrier concentration is silicon nᵢ = 1.5 x 10¹⁰ cm⁻³ at 300 K, kT/q = 26 mV and the permittivity of silicon ϵₛᵢ = 1.04 x 10⁻¹² F/cm. The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are
a. 0.7 V and 1 x 10⁻⁴ cm
b. 0.86 V and 1 x 10⁻⁴ cm
c. 0.7 V and 3.3 x 10⁻⁵ cm
d. 0.86 V and 3.3 x 10⁻⁵ cm
