A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 1015 cm-3 and Nd = 5 x 1016 cm3. N; = 1. 5 x 1010 cm. € = 11. 7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax
