Sketch the low and high-frequency behavior (and explain the difference) of an MOS capacitor with a high-k gate dielectric (epsilon_r = 25) on an p-type semiconductor (epsilon_r = 10, ni = 1013 cm-3). Mark off the accumulation, depletion, inversion regions, and the approximate location of the flat band and threshold voltages. If the high-frequency capacitance is 250 nF/cm2 in accumulation and 50 nF/cm2 in inversion, calculate the dielectric thickness and the depletion width in inversion.
