The room-temperature electrical conductivity of a silicon specimen is 5. 93x10-3(S2-m)- 1 The hole concentration is known to be 7. 0x1017 m-3. Using the electron and hole mobilities for silicon in Table 18. 3, compute the electron concentration. (b) On the basis of the result in part (a), is the specimen intrinsic, n-type extrinsic, or p-type extrinsic? Why? Table 18. 3 Band Gap Energies, Electron and Hole Mobilities, and Intrinsic Electrical Conductivities at Room Temperature for Semiconducting Materials Band Gap (eV) Hole Mobility (mº/V-s) Material 1. 11 0. 67 0. 05 0. 18 Ge Electrical Conductivity Electron Mobility [(12-m -1 (m-/V-s) Elemental 4 X 1024 0. 14 2. 2 0. 38 III-V Compounds 0. 03 0. 85 2 x 104 7. 7 II-VI Compounds 0. 03 0. 03 GaP GaAs InSb 2. 25 1. 42 0. 17 0. 015 0. 04 10-6 0. 07 CdS Zn Te 2. 40 2. 26 0. 1
